| 摘要 |
PURPOSE: A fabrication method of semiconductor devices is provided to enhance a capacitance without increasing a height of a capacitor by increasing the surface area of the capacitor using an SNC(Storage Node Contact) plug polysilicon layer as a lower electrode. CONSTITUTION: Bit lines(14) are formed on a substrate(11) formed a lower layer(12) having a landing plug(13). The first interlayer dielectric(16), a barrier layer(17) and an etch stopper(18) are sequentially formed on the resultant structure. After forming the first contact hole, an SNC plug polysilicon layer(19) is formed on inner walls of the contact hole, and an ozone(O3) PSG layer is then filled into the first contact hole. The second contact hole is formed by forming and selectively etching the second interlayer dielectric(21). The third contact hole(23) is formed to expose the SNC plug polysilicon layer(19) by removing the O3 PSG layer. A lower electrode(24) is formed on the third contact hole(23).
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