发明名称 Structure for electrically connecting a first body of semiconductor material overlaid by a second body of semiconductor material composite structure using electric connection structure
摘要 An electric connection structure connecting a first silicon body to conductive regions provided on the surface of a second silicon body arranged on the first body. The electric connection structure includes at least one plug region of silicon, which extends through the second body; at least one insulation region laterally surrounding the plug region; and at least one conductive electromechanical connection region arranged between the first body and the second body, and in electrical contact with the plug region and with conductive regions of the first body. To form the plug region, trenches are dug in a first wafer and are filled, at least partially, with insulating material. The plug region is fixed to a metal region provided on a second wafer, by performing a low-temperature heat treatment which causes a chemical reaction between the metal and the silicon. The first wafer is thinned until the trenches and electrical connections are formed on the free face of the first wafer.
申请公布号 US6504253(B2) 申请公布日期 2003.01.07
申请号 US20010844180 申请日期 2001.04.27
申请人 STMICROELECTRONICS S.R.L. 发明人 MASTROMATTEO UBALDO;GHIRONI FABRIZIO;AINA ROBERTO;BOMBONATI MAURO
分类号 B81C1/00;B81C3/00;H01L23/48;H01L23/52;H01L25/065;H01L25/07;H01L25/18;H01L27/00;H01L29/84;(IPC1-7):H01L23/48;H01L29/40 主分类号 B81C1/00
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