METHOD FOR FABRICATING BIT LINE CONTACT OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a bit line contact of a semiconductor device is provided to prevent contact resistance from being increased by increased density of flurorine, by making a barrier layer composed of an oxide layer grown by ozonized water or H2O2. CONSTITUTION: An interlayer dielectric(110) is formed on the entire surface of a semiconductor substrate(100) having a word line(120). An exposure process and an etch process are performed to form a contact hole inside the interlayer dielectric. After the contact hole is cleaned by a wet cleaning process, the barrier layer is formed in the contact hole by using a chemical material which is an oxidant. An impurity ion implantation process is performed on the resultant structure. After the barrier layer is removed through a cleaning process, a conductive layer(160) is stacked.