NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR PROGRAMMING THE SAME

摘要

PURPOSE: A non-volatile semiconductor memory device and a method for programming the same are provided to obtain an optimum program time by preventing disturbance of a program due to an increase of a substrate voltage. CONSTITUTION: A memory cell array(100) is formed on a pocket P-well region of an N-well. The memory cell array(100) has a plurality of cell strings(101) connected with the bit lines(BL0-BLm). Each cell string(101) is formed with a string selection transistor(SST), a ground selection transistor(GST), and a plurality of flash EEPROM cells(MC0-MC15) connected between the selection transistors(SST,GST). A plurality of strapping lines(102) are electrically connected with the pocket P-well region. The strapping lines(102) are commonly connected with a well voltage supply line(104). A block selection circuit(120) generates a block selection signal(BS), a string selection signal(SS), and a ground selection signal(GS). A switch circuit(140) is formed with a plurality of pass transistors(T0-T17). A well voltage detection circuit(160) is connected with the well voltage supply line(104). A word line selection signal generation circuit(180) is operated according to a detection signal of the well voltage detection circuit(160). A page buffer circuit(200) is connected with the bit lines(BL0-BLm). A row decoder circuit(220) outputs latched data of the page buffer circuit(200).