METAL INTERCONNECTION IN SEMICONDUCTOR DEVICE HAVING DOUBLE METAL LAYERS AND METHOD FOR FORMING THE SAME

摘要

PURPOSE: A metal interconnection in semiconductor device having double metal layers and a method for forming the same are provided to improve throughput and characteristic of device and achieve simplification of process. CONSTITUTION: An interlayer dielectric(21) including a metal contact(22) is formed on a semiconductor substrate(20). A first metal layer is formed on the interlayer dielectric in order to bury the metal contact. A second metal layer is formed on the first metal layer.