发明名称 SUBSTRATE RETENTION MECHANISM AND SUBSTRATE PROCESSING UNIT
摘要 <p>PROBLEM TO BE SOLVED: To prevent nonuniformity in processing in a substrate retention mechanism where a substrate holder is also used as an electrode, and to provide a substrate processing unit. SOLUTION: A substrate retention mechanism 2 retains a substrate 9 in a process chamber 1. The mechanism 2 has a substrate holder 21 that performs face contact and retains the substrate 9, and a lift pin 22 that is utilized for transferring the substrate 9 and is placed in a pin layer passage 24. The substrate holder 21 comprises a holder body 211 made of a conductor and a cover member 212 made of a dielectric for covering the front of the holder body 211, and is also used as an electrode for setting an electric field in space in the process chamber. In the capacitance between the front of the holder body 211 and that of a cover member 212, the capacitance per unit area in the pin insertion passage 24 is the same as that per unit area at a portion other than the pin layer passage 24.</p>
申请公布号 JP2002373932(A) 申请公布日期 2002.12.26
申请号 JP20010180609 申请日期 2001.06.14
申请人 ANELVA CORP 发明人 HIRAYANAGI HIROHISA;SAITO MASAKI;OSHIMA KEIICHIRO;YAMAZAKI YUKITERU
分类号 C23C14/50;C23C16/458;H01L21/205;H01L21/302;H01L21/3065;H01L21/68;H01L21/683;(IPC1-7):H01L21/68;H01L21/306 主分类号 C23C14/50
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