摘要 |
There is provided a boot block flash memory control circuit for controlling a boot block flash memory, the boot block flash memory including at least one symmetrical block each having a first capacity and a plurality of asymmetrical blocks each having a capacity smaller than the first capacity. The boot block flash memory control circuit detects a first address signal designating an address in the boot block flash memory and a first command signal for causing the boot block flash memory to operate, and based on the detected first address signal and first command signal, outputs a second command signal and a second address signal for erasing data stored in one of the at least the one symmetrical block or a subset of the plurality of asymmetrical blocks.
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