| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of thin film deposition, by which a target is hardly cracked even if sputtering voltage is increased and the improvement of the productivity of a thin film is easily attained by increasing the film deposition speed in the thin film deposition by a sputtering method using a ceramic target. SOLUTION: In the thin film deposition by the sputtering method using the ceramic target, the temperature T of cooling water for circulating near the target to suppress temperature rise due to the heat generation of the target is set to 300 K<=T<=360 K and >=4 W/cm<2> sputtering power is applied in this condition. |
