| 发明名称 |
Semiconductor device having a pair of N-channel TFT and P-channel TFT |
| 摘要 |
The absolute value of the threshold voltage of a P-channel TFT is reduced by making its channel length shorter than that of an N-channel TFT by at least 20%, to thereby approximately equalize the threshold voltage absolute values of those TFTs.
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| 申请公布号 |
US6492685(B1) |
申请公布日期 |
2002.12.10 |
| 申请号 |
US20000666469 |
申请日期 |
2000.09.20 |
| 申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
KOYAMA JUN;TAKEMURA YASUHIKO |
| 分类号 |
H01L29/786;H01L21/77;H01L21/8238;H01L21/84;H01L27/092;H01L27/12;H01L29/423;H01L29/49;(IPC1-7):H01L27/01;H01L31/039;H01L29/04;H01L31/20 |
主分类号 |
H01L29/786 |
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