发明名称 EXHAUST GAS TREATMENT SYSTEM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a technique by which the running cost of a semiconductor device manufacturing device provided with an industrial pretreatment facility can be reduced. SOLUTION: The industrial pretreatment facility 3 which performs exhaust gas treatment is operated in accordance with the operation of a manufacturing facility 2 which treats a substrate by linking the facilities 2 and 3 to each other through an exhaust pipeline 6 and, in addition, connecting the facilities 2 and 3 to each other through a communication cable 17.
申请公布号 JP2002353197(A) 申请公布日期 2002.12.06
申请号 JP20010156239 申请日期 2001.05.25
申请人 HITACHI LTD 发明人 FUKADA MASAO;SUZUKI SHINICHI
分类号 F01N9/00;B01D53/34;B01D53/70;B01D53/86;H01L21/302;H01L21/3065;H01L21/31 主分类号 F01N9/00
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