发明名称 |
EXHAUST GAS TREATMENT SYSTEM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a technique by which the running cost of a semiconductor device manufacturing device provided with an industrial pretreatment facility can be reduced. SOLUTION: The industrial pretreatment facility 3 which performs exhaust gas treatment is operated in accordance with the operation of a manufacturing facility 2 which treats a substrate by linking the facilities 2 and 3 to each other through an exhaust pipeline 6 and, in addition, connecting the facilities 2 and 3 to each other through a communication cable 17. |
申请公布号 |
JP2002353197(A) |
申请公布日期 |
2002.12.06 |
申请号 |
JP20010156239 |
申请日期 |
2001.05.25 |
申请人 |
HITACHI LTD |
发明人 |
FUKADA MASAO;SUZUKI SHINICHI |
分类号 |
F01N9/00;B01D53/34;B01D53/70;B01D53/86;H01L21/302;H01L21/3065;H01L21/31 |
主分类号 |
F01N9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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