| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a poly silicon thin film transistor that has excellent characteristics with high reliability and a high yield by protecting the surfaces and the interfaces of a substrate and each film constituting a thin film transistor from impurity contamination such as boron affecting transistor operations. SOLUTION: In a manufacturing process of a poly silicon thin film transistor used for a liquid crystal display, immediately after a semiconductor film 3 consisting of amorphous silicon is formed, a surface oxide film 4 is formed by applying an oxygen plasma treatment B. Immediately before the base insulation film 2 of the semiconductor film 3 is formed, an oxygen plasma treatment A may be applied thereon. Thereby, impurities in the air attached on the surface of the glass substrate can be removed, and uptake of impurity contamination into film interfaces and films can be prevented. |
