发明名称 OXIDE PROTECTION FOR A BOOSTER CIRCUIT
摘要 A protection system that protects a booster circuit used to boost operating signals in a memory device. The system includes a protection circuit for protecting an output transistor of the booster circuit. The protection circuit includes a transfer gate coupled to the output transistor and coupled to receive a first boost signal and a second boost signal. The transfer gate opens and closes in response to the second boost signal. When the transfer gate is closed, the first boost signal is uncoupled from the output transistor, and when the transfer gate is opened, the first boost signal is coupled to the output transistor. The circuit also includes a protection transistor coupled to the second boost signal, a supply voltage and the output transistor, where the protection transistor couples the supply voltage to the output transistor when the transfer gate is closed.
申请公布号 US2002181256(A1) 申请公布日期 2002.12.05
申请号 US20010916382 申请日期 2001.07.27
申请人 AKAOGI TAKAO 发明人 AKAOGI TAKAO
分类号 H01L27/04;G11C5/14;H01L21/822;H02M3/07;H03K17/06;H03K17/08;H03K17/687;(IPC1-7):H02M3/18 主分类号 H01L27/04
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