发明名称 |
Apparatus and method of ion beam processing |
摘要 |
In order to suppress quick potential change on the surface of a process target when the shutter plate is opened and closed, when an ion beam IB from the ion source 10 is irradiated on a substrate 38 and the ion beam IB is neutralized by using neutralizing electrons e- generated by a microwave neutralizer 14, the shutter plate 62 shields the substrate 38 before and after the milling processing of the substrate 38, and the voltage of a power supply 34 is lowered when the shutter plate 62 is opened and closed so as to limit the amount of ion beam IB irradiation, thereby suppressing charge-up on the surface of the substrate 38.
|
申请公布号 |
US2002175296(A1) |
申请公布日期 |
2002.11.28 |
申请号 |
US20020081179 |
申请日期 |
2002.02.25 |
申请人 |
KIMURA YOSHIHIRO;HISAMOTO KO;SUGIURA TAKAHARU;NARITA YUSUKE |
发明人 |
KIMURA YOSHIHIRO;HISAMOTO KO;SUGIURA TAKAHARU;NARITA YUSUKE |
分类号 |
G21K5/04;C23C14/46;H01J37/305;H01J37/317;H01L21/302;H01L21/3065;(IPC1-7):G21K5/10 |
主分类号 |
G21K5/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|