| 摘要 |
PURPOSE: A method for manufacturing an isolation layer in a semiconductor device is provided to be capable of increasing packing density of a trench. CONSTITUTION: A pad oxide pattern(2) and a nitride pattern(3) are sequentially formed on a semiconductor substrate(1) to expose an isolation region. A trench is formed by etching the exposed isolation region. An oxide layer(5) is grown by thermal oxidation of the surface of the trench. A porous silicon layer is formed on the resultant structure. A spacer is formed at sidewalls of the trench by etching the porous silicon layer. By oxidation of the spacer, an isolation layer(7) is formed to fill the trench.
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