发明名称 |
Methods of forming diodes |
摘要 |
Disclosed are methods of forming resistors and diodes from semiconductive material, and static random access memory (SRAM) cells incorporating resistors, and to integrated circuitry incorporating resistors and diodes. A node to which electrical connection is to be made is provided. An electrically insulative layer is provided outwardly of the node. An opening is provided in the electrically insulative layer over the node. The opening is filled with semiconductive material which depending on configuration serves as one or both of a vertically elongated diode and resistor.
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申请公布号 |
US6482693(B1) |
申请公布日期 |
2002.11.19 |
申请号 |
US19990452725 |
申请日期 |
1999.11.30 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
ROLFSON J. BRETT;MANNING MONTE |
分类号 |
H01L21/02;H01L21/768;H01L21/8244;H01L27/11;(IPC1-7):H01L21/823;H01L21/824 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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