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发明名称
MOS-ANORDNUNG MIT GATE-SUBSTRAT ANSCHLUSS DIE AUF EINEM SOI-SUBSTRAT GEBILDET WIRD
摘要
申请公布号
DE69715909(D1)
申请公布日期
2002.10.31
申请号
DE19976015909
申请日期
1997.11.12
申请人
HONEYWELL, INC.
发明人
FECHNER, S.
分类号
H01L29/786;(IPC1-7):H01L29/786
主分类号
H01L29/786
代理机构
代理人
主权项
地址
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