发明名称 |
Precursor deposition using ultrasonic nebulizer |
摘要 |
A chemical vapor deposition (CVD) apparatus for depositing a low vapor pressure copper precursor onto a silicon wafer. The CVD apparatus includes a CVD reaction chamber with an interior containing a substrate holder adapted to support a substrate, such as a silicon wafer, at a predetermined position within the CVD reaction chamber. An ultrasonic nebulizer is operatively connected to the CVD reaction chamber and is adapted to connect to a source of liquid precursor. The ultrasonic nebulizer has an atomizing discharge end adapted to atomize the liquid precursor and deposit the atomized precursor onto a substrate supported by the substrate holder. A gas distribution ring is disposed within the interior of the CVD reaction chamber for discharging a directionally oriented gas into the atomized precursor to direct the atomized precursor toward the substrate. Additional embodiments and methods for depositing the precursor are described.
|
申请公布号 |
US6471782(B1) |
申请公布日期 |
2002.10.29 |
申请号 |
US19990447985 |
申请日期 |
1999.11.23 |
申请人 |
TOKYO ELECTRONIC LIMITED |
发明人 |
FANG CHING-PING;HILLMAN JOSEPH T. |
分类号 |
C23C16/455;C23C16/18;C23C16/448;H01L21/285;(IPC1-7):C23C16/00 |
主分类号 |
C23C16/455 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|