| 摘要 |
The present invention provides a circuit, in which a device typified by a PLED element is built into a flip-flop. In this case, a storage node of the device is low leakage. According to the present invention, it is possible to realize a SRAM that has nonvolatility while achieving high-speed operation. It is also possible to realize a flip-flop having the same characteristics. An example of a typical mode of the present invention is a storage circuit characterized by the following: a storage element is a device incorporating: a first path for a carrier; a first mode for storing a charge that generates an electric field where conductivity of the first path is changed; and a barrier structure through which a second carrier moves in response to given voltage so that the second carrier is stored in the first node; and the storage circuit includes a second node, to which information stored in the first node is outputted steadily in a state in which power is supplied. The flip-flop and the SRAM are realized using such a basic circuit.
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