JUNCTION FIELD EFFECT TRANSISTOR AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a junction field effect transistor and its manufacturing method in which the labor of manufacturing process can be reduced. SOLUTION: The junction field effect transistor has a vertical structure and normally-off type on/off characteristics wherein a semiconductor substrate 1, a channel layer 3 and a source diffusion layer 9 are mainly composed of SiC. A gate line 7 is formed of a semiconductor material different from that of the channel layer 3 and making a PN junction with the channel layer 3 (a semiconductor material mainly composed of polysilicon) and the need for forming a gate diffusion layer by ion implantation is eliminated.