| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor device which can be integrated highly and driven with a low voltage while avoiding disturbance. SOLUTION: The nonvolatile semiconductor storage device has a memory cell array area formed by arraying a plurality of memory cells 100 having first and second MONOS memory cells 108A and 108B controlled by a word gate and a control gate in first and second directions A and B. The memory cell array is divided in the second direction B and has a plurality of sectors 0, 1, etc., having their lengths in the first direction A. The respective sectors 0, 1, etc., have memory cells 100 which are arrayed in a plurality of columns in the first direction. A control gate driving part has control gate drivers 300 and 301 corresponding to each of the sectors 0 and 1. The control gate drivers 300 and 301 set the potentials of first and second control gates of one corresponding sector independently of other sector areas.</p> |
