发明名称 PATTERN FORMING METHOD BY PHOTOLITHOGRAPHY AND PATTERN FORMING APPARATUS
摘要 <p>PROBLEM TO BE SOLVED: To provide a pattern forming method by photolithography in which a resist coating material of an unexposed part removed in a developing step is reutilized to reduce the consumption of an alkali developing solution used for washing the photoresist coating material off as well as to avoid waste of the photoresist coating material and to provide a pattern forming apparatus. SOLUTION: A resist removing step in which a resist coating material is removed with a solvent is carried out between an exposure step and an alkali developing step, the resist coating material is separated from waste liquor containing the dissolved resist coating material produced in the resist removing step and the separated resist coating material is refined and reutilized in a coating step.</p>
申请公布号 JP2002311602(A) 申请公布日期 2002.10.23
申请号 JP20010115778 申请日期 2001.04.13
申请人 DAINIPPON PRINTING CO LTD 发明人 FUKAYA KATSUMI
分类号 G02B5/20;G03F7/26;G03F7/30;G03F7/38;H01L21/027;(IPC1-7):G03F7/38 主分类号 G02B5/20
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