发明名称 |
Method for forming a copper interconnect using a multi-platen chemical mechanical polishing (CMP) process |
摘要 |
A copper interconnect polishing process begins by polishing (17) a bulk thickness of copper (63) using a first platen. A second platen is then used to remove (19) a thin remaining interfacial copper layer to expose a barrier film (61). Computer control (21) monitors polish times of the first and second platen and adjusts these times to improve wafer throughput. One or more platens and/or the wafer is rinsed (20) between the interfacial copper polish and the barrier polish to reduce slurry cross contamination. A third platen and slurry is then used to polish away exposed portions of the barrier (61) to complete polishing of the copper interconnect structure. A holding tank that contains anti-corrosive fluid is used to queue the wafers until subsequent scrubbing operations (25). A scrubbing operation (25) that is substantially void of light is used to reduce photovoltaic induced corrosion of copper in the drying chamber of the scubber.
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申请公布号 |
US2002151167(A1) |
申请公布日期 |
2002.10.17 |
申请号 |
US20020175637 |
申请日期 |
2002.06.20 |
申请人 |
FARKAS JANOS;ANTHONY BRIAN G.;GUVENILIR ABBAS;ISLAM MOHAMMED RABIUL;KOLAGUNTA VENKAT;MENDONCA JOHN;TIWARI RAJESH;VENKATESAN SURESH |
发明人 |
FARKAS JANOS;ANTHONY BRIAN G.;GUVENILIR ABBAS;ISLAM MOHAMMED RABIUL;KOLAGUNTA VENKAT;MENDONCA JOHN;TIWARI RAJESH;VENKATESAN SURESH |
分类号 |
H01L21/02;H01L21/321;H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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