发明名称 |
RESIN COATING MATERIAL AND RESIST PATTERN FORMING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To obtain such a resin coating material and a forming method of a resist pattern that reduction of a film can be decreased and a pattern having a square cross section can be obtd. by a simple means when a chemically amplifying resist is used to form a pattern. SOLUTION: A chemically amplifying resist film 2 is formed on an object 1 for etching, and the film is subjected to first heat treatment. Then a resin coating material 7 containing a nonwater soluble resin having a small water content (e.g. a polyolefin polymer) and a basic compd. (e.g. aromatic amine, aliphatic amine and alkylamine) is applied on the chemically amplifying resist film 2. The films are exposed according to a pattern and subjected to second heat treatment. Then the resin coating material film 7 is peeled and the resist film is developed. |
申请公布号 |
JPH1010743(A) |
申请公布日期 |
1998.01.16 |
申请号 |
JP19960167059 |
申请日期 |
1996.06.27 |
申请人 |
FUJITSU LTD |
发明人 |
USUJIMA AKIHIRO;MATSUNO KIMIE |
分类号 |
G03F7/11;G03F7/38;H01L21/027;(IPC1-7):G03F7/11 |
主分类号 |
G03F7/11 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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