Group III nitride compound semiconductor laser manufacturing method

摘要

A nitride compound semiconductor laser has several crystal layers, an active layer-side guide layer (5), aluminum-gallium-indium-nitride active layer (6), a current constricting aluminum-nitride layer (8c), aluminum-gallium-indium-nitride electrode-side guide layer (8b), and aluminum-gallium-indium-nitride clad layer (9). The crystal layer are made of a group III nitride compound. A nitride compound semiconductor laser has several crystal layers, an active layer-side guide layer, an active layer, a current constricting aluminum-nitride layer having a stripe-shape aperture, an electrode-side guide layer filling the aperture of the current constricting layer, and a clad layer. The clad layer is made of Al uGa 1-u-vIn vN (where u = 0-1 and v = 0-1). The crystal layers are made of a group III nitride compound expressed by the formula (Al xGa 1-x) 1-yIn yN (where x and y = 0-1). The active layer is made of Al x'Ga 1-x'-y''In y''N (where x' and y' = 0-1). The electrode-side guide layer is made of Al xGa 1-x-yIn yN (where x and y = 0-1). An independent claim is included for the manufacture of nitride compound semiconductor laser.