| 摘要 |
<p>PROBLEM TO BE SOLVED: To reduce increase in the number of layers of a multilevel wiring structure to simplify the structure and manufacturing processes and thereby to increase the fineness and integration degree, in a magnetic random access memory device comprising an access transistor 10 and a TMR element 7 having a multilayer structure of a spin free layer 4 with a variable magnetization direction and a spin fixed layer 6 with a fixed magnetization direction, both of which are disposed in a region where a write word line 2 and a bit line 3 cross each other. SOLUTION: The TMR element 7 is disposed in the region where the word line 8a and the bit line 3 cross each other, whose crossing become the gate for the access transistor 10. The word line 8a serves as both read and write word lines.</p> |
