| 摘要 |
PURPOSE: A method for forming a contact hole in a semiconductor device is provided to be capable of improving the step coverage. CONSTITUTION: A lower layer(22) including a gate electrode and an insulating layer is formed on a semiconductor substrate(21). A planarization layer(23) having a relatively thick thickness is formed on the resultant structure. The planarization layer(23) and the lower layer(22) are selectively etched so as to remain a portion of the lower layer(22). Then, a plug ion-implantation is performed in order to increase etch rate. A contact hole is then formed by blanket-etching of the remaining lower layer(22) together with the over deposited planarization layer.
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