| 摘要 |
PROBLEM TO BE SOLVED: To provide a chemical vapor deposition apparatus which deposits a thin film with superior step coverage and film quality without bringing damage to a substrate and a circuit element, while keeping a fast evaporation speed at low temperature. SOLUTION: An RF power source connection portion 303 connected to an external RF power source 302 is installed on an upper side of a chamber 300. An RF electrode plate 306 is installed within the chamber to be spaced with a predetermined gap from an upper surface of a showerhead 309. Plasma is generated in a first buffer portion 310, which is defined by a gap between the RF electrode plate and an upper surface of the showerhead, by means of the electric power applied from the RF power source to the RF electrode plate. A second buffer portion 316 is defined by a space between the showerheads 309 and 313 respectively arranged in upper and lower portions. Reactant gases are supplied from the first buffer portion in which the plasma is generated; and source gases are supplied from the second buffer portion.
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