发明名称 |
Semiconductor device and fabrication method |
摘要 |
A method for forming a semiconductor device that has a fully depleted MOSFET and a partially depleted MOSFET having excellent characteristics on the same substrate without effecting control by means of the impurity concentration of the channel region. A semiconductor device is provided with a fully-depleted SOI MOSFET and a partially-depleted SOI MOSFET on the same SOI substrate through isolation by an element isolation film. The SOI substrate includes a buried oxide film and a SOI layer provided in succession on a silicon substrate.
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申请公布号 |
US6461907(B2) |
申请公布日期 |
2002.10.08 |
申请号 |
US20010782056 |
申请日期 |
2001.02.14 |
申请人 |
NEC CORPORATION |
发明人 |
IMAI KIYOTAKA |
分类号 |
H01L29/786;H01L21/84;H01L27/12;(IPC1-7):H01L21/823;H01L21/00 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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