| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching method which is excellent in controllability and reproducibility of etching when etching the material containing silicon, using the gas containing halogen elements other than fluorine. SOLUTION: The etching method includes a process (a) of etching the material containing silicon using the gas plasma containing halogen atoms other than fluorine, a process (b) of dry cleaning the interior of the reaction chamber using the gas plasma containing fluorine after the above process (a), and a process (c) of generating oxygen plasma within the above reaction chamber and performing plasma treatment immediately after the above process (b). Preferably, this method includes a process (f) of monitoring the luminous intensity of SiF and F within plasma each between the above processes (b) and (c), and controlling the treatment time.
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