| 摘要 |
PURPOSE: A method for forming thermally stable nickel germanosilicide on SiGe is provide to be capable of decreasing the sheet resistance of a device by adding iridium or cobalt at Ni/SiGe layer. CONSTITUTION: A silicon germanium layer(14) is formed on a substrate(12). The silicon-germanium layer(14) can be either single crystalline or polycrystalline. On source and drain regions, the silicon germanium layer(14) typically is single crystalline. On polycrystalline lines, the silicon germanium layer(14) becomes polycrystalline. An iridium or a cobalt layer(16) is deposited on the silicon germanium layer(14). A nickel layer(18) is deposited on the iridium or cobalt layer(16). The nickel layer(18) and the iridium or cobalt layer(16) are preferably deposited by physical vapor deposition, which may include sputtering and evaporation, or by chemical vapor deposition, which may include metal organic chemical vapor deposition. The iridium or cobalt layer can be deposited before the nickel layer, or the iridium or cobalt layer can be deposited on top of the nickel layer.
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