发明名称 |
Semiconductor device having contact using crack-protecting layer and method of forming the same |
摘要 |
A semiconductor device having a contact using a crack-protecting layer and a method of forming the same are provided. The crack-protecting layer formed of a dielectric material is formed on an interlayer dielectric layer. The crack-protecting layer relieves or absorbs residual stress generated on a conductive layer used in forming a contact plug. Thus, a contact can be formed without damage to the interlayer dielectric layer due to residual stress.
|
申请公布号 |
US2002125543(A1) |
申请公布日期 |
2002.09.12 |
申请号 |
US20010055260 |
申请日期 |
2001.10.26 |
申请人 |
SAMSUNG ELECTRONICS CO. LTD. |
发明人 |
MOON KWANG-JIN;PARK HEE-SOOK;LEE MYOUNG-BUM |
分类号 |
H01L21/28;H01L21/3205;H01L21/768;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|