发明名称 Voltage driver for a memory
摘要 A circuit includes (i) an N-channel device having a gate, a source connected to low voltage, and a drain connected to a memory select gate, (ii) a P-channel device having a gate, a source, and a drain connected to the drain of the N-channel device, and (iii) a voltage supply connected to the source of the P-channel device, the voltage supply switching between a first high voltage and a first lower voltage. A gate driver supplies, to the gates of the N-channel and P-channel devices, a second high voltage, a second low voltage, or an intermediary voltage between the second high voltage and second low voltage. The gate driver supplies the intermediary voltage when the voltage supply switches between the first high voltage and first lower voltage.
申请公布号 US6449211(B1) 申请公布日期 2002.09.10
申请号 US20010945021 申请日期 2001.08.31
申请人 INTEL CORPORATION 发明人 JUNGROTH OWEN W.;SUNDARAM RAJESH;TAUB MASE J.;BAINS RUPINDER K.;ZENG RAYMOND;NGO BINH N.;PATHAK BHARAT
分类号 G11C5/14;G11C8/08;G11C16/30;(IPC1-7):G11C8/00 主分类号 G11C5/14
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