| 摘要 |
<p>An infrared thermographic technique for rapid parallel screening of compositional arrays of potential chemical sensor materials has been developed. The technique involves applying a voltage bias and the associated current to the sample array during screening. The thermographic response is amplified by the resistance change that occurs with gas adsorption, and is directly monitored as the temperature change associated with I2R heating. This technique can also be used to determine n- or p-type character for the semiconductor in question.</p> |
