| 摘要 |
The invention relates to a contact system comprising a dielectric fuse (4) for an IC-memory component, and a method for producing one such contact system. Said contact system comprises a metallisation region (2, 3) which is arranged on a substrate (1) and is surrounded by an isolation layer (17). An isolation layer (4) used as a dielectric fuse is arranged on said metallisation region (2, 3). A metallisation layer is then applied to the dielectric fuse, said metallisation layer being used as a bit line (5) of the IC-memory component and being preferably produced according to RIE technology. As the dielectric fuse (4) is arranged directly below the bit line (5), it is protected from damage which may occur during later steps in the process, especially when applying a top contact (9) to the bit line (5).
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