| 摘要 |
<p>A sense amplifier control circuit for use in a semiconductor memory device is provided which comprises a sense amplifier (106) comprising first transistors of a first conductivity type connected in the form of a latch type differential amplifier, a set driver (2; 2a) corresponding to the sense amplifier (106) and the set driver (2; 2a) comprising a second transistor of a second conductivity type for connecting the common source line (3) of the latch type differential amplifier to a restore power supply line. <IMAGE></p> |
