| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor integrated circuit device having stable characteristics. SOLUTION: After a copper film has been deposited so as to embed wiring trenches 21, 22, 23 and 24, and then the copper film on the outside of the wirings 21, 22, 23 and 24 including the upper layer of a tantalum layer 26 is polished off by a chemical mechanical polishing(CMP) method; and when a part of the tantalum film 26 is exposed, a surfactant is added to slurry, and when the outside of the wirings 21, 22, 23 and 24 is removed to completely expose the tantalum film 26, benzotriazole is added to the slurry, to thereby remove the tantalum film 26 on the outside of the wirings 21, 22, 23 and 24.
|
