| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor driver suited for various kinds of withstanding voltages by integrating a plurality of semiconductor drivers with different withstanding voltages on the same chip. SOLUTION: The semiconductor device includes a buried insulating layer 1 formed on a semiconductor substrate 100, a plurality of power semiconductor elements 2 and 3 formed on the semiconductor substrate 100 located on the buried insulating layer 101, a trench 4 for separating in an insulated state between the power elements 2 and 3, and an isolator 5 for insulating and driving a control electrode of the power semiconductor element. The transistors 2 and 3 are used in a serial connection.</p> |
