发明名称 |
Method for fabricating a semiconducting nitride film, susceptor tray, and apparatus for fabricating a semiconducting nitride film |
摘要 |
In fabricating a semiconducting nitride film by a MOCVD method, a susceptor tray is employed. The susceptor tray is constructed of a base plate and an outer member detachable for the base plate. A substrate for the film to be formed is set in the recessed portion formed by disposing the outer member on the base plate.
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申请公布号 |
US2002119642(A1) |
申请公布日期 |
2002.08.29 |
申请号 |
US20020060802 |
申请日期 |
2002.01.30 |
申请人 |
NGK INSULATORS, LTD. |
发明人 |
SHIBATA TOMOHIKO;NAKAMURA YUKINORI;TANAKA MITSUHIRO;ASAI KEIICHIRO |
分类号 |
C23C16/34;C23C16/44;C23C16/458;H01L21/205;(IPC1-7):H01L21/36;C23C16/00 |
主分类号 |
C23C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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