发明名称 Method for fabricating a semiconducting nitride film, susceptor tray, and apparatus for fabricating a semiconducting nitride film
摘要 In fabricating a semiconducting nitride film by a MOCVD method, a susceptor tray is employed. The susceptor tray is constructed of a base plate and an outer member detachable for the base plate. A substrate for the film to be formed is set in the recessed portion formed by disposing the outer member on the base plate.
申请公布号 US2002119642(A1) 申请公布日期 2002.08.29
申请号 US20020060802 申请日期 2002.01.30
申请人 NGK INSULATORS, LTD. 发明人 SHIBATA TOMOHIKO;NAKAMURA YUKINORI;TANAKA MITSUHIRO;ASAI KEIICHIRO
分类号 C23C16/34;C23C16/44;C23C16/458;H01L21/205;(IPC1-7):H01L21/36;C23C16/00 主分类号 C23C16/34
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