NOR-type flash memory and method for manufacturing the same

摘要

Trenches are formed by using stripe-form patterns with the same width and the same interval as a mask in the surface area of a silicon substrate and element isolation regions of STI structure are formed by filling insulating films into the trenches. Further, slits for isolating floating gates are formed by etching a polysilicon layer by using stripe-form patterns with the same width and the same interval as a mask. In addition, control gates (word lines) are formed by subjecting the polysilicon layer to the anisotropic etching process by using stripe-form patterns with the same width and the same interval as a mask.