发明名称 SYNCHRONOUS READING NONVOLATILE MEMORY
摘要 <p>PROBLEM TO BE SOLVED: To provide a nonvolatile memory which can perform synchronous reading with a frequency higher than a frequency which can be used now for data stored in a nonvolatile memory and which is operated by a burst reading mode. SOLUTION: This nonvolatile memory (10) is provided with an input pin (2) receiving an external clock signal supplied by a user, an input buffer (4) receiving the external clock signal and supplying an intermediate clock signal relating to the external clock signal and being delayed, and a delayed lock loop (12) receiving the intermediate clock signal and supplying the intermediate clock signal distributed in the nonvolatile memory and synchronizing with the external clock signal substantially.</p>
申请公布号 JP2002230986(A) 申请公布日期 2002.08.16
申请号 JP20020006161 申请日期 2002.01.15
申请人 STMICROELECTRONICS SRL 发明人 FRULIO MASSIMILIANO;VILLA CORRADO;BARTOLI SIMONE
分类号 G11C16/02;G11C7/10;G11C7/22;G11C16/32;(IPC1-7):G11C16/02 主分类号 G11C16/02
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