发明名称 |
SYNCHRONOUS READING NONVOLATILE MEMORY |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a nonvolatile memory which can perform synchronous reading with a frequency higher than a frequency which can be used now for data stored in a nonvolatile memory and which is operated by a burst reading mode. SOLUTION: This nonvolatile memory (10) is provided with an input pin (2) receiving an external clock signal supplied by a user, an input buffer (4) receiving the external clock signal and supplying an intermediate clock signal relating to the external clock signal and being delayed, and a delayed lock loop (12) receiving the intermediate clock signal and supplying the intermediate clock signal distributed in the nonvolatile memory and synchronizing with the external clock signal substantially.</p> |
申请公布号 |
JP2002230986(A) |
申请公布日期 |
2002.08.16 |
申请号 |
JP20020006161 |
申请日期 |
2002.01.15 |
申请人 |
STMICROELECTRONICS SRL |
发明人 |
FRULIO MASSIMILIANO;VILLA CORRADO;BARTOLI SIMONE |
分类号 |
G11C16/02;G11C7/10;G11C7/22;G11C16/32;(IPC1-7):G11C16/02 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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