SUBSTRATE WITH MULTILAYER FILM, REFLECTION MASK BLANK FOR EXPOSURE, REFLECTION MASK FOR EXPOSURE, METHOD OF MANUFACTURING IT AND METHOD OF MANUFACTURING SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To provide a reflection mask for exposure which can make a transfer of a pattern in a lithography with high precision and is applicable also to EUV light with the very high flatness-surface of a multilayer film. SOLUTION: A stress correcting film 15 is formed for correcting a warpage, which is formed by a warpage in a substrate 11 and a stress in a multilayer film 12 and is formed in the surface of the film 12. The very high flatness- surface of the film 12 is obtained by correcting the warpage. A mask blank having this very high flatness-surface of the film 12 is manufactured and moreover, this mask blank is dry-etched, whereby a reflection type mask for exposure applicable also to EUV light is manufactured.