| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist material which is sensitive to high energy beams and excellent in the sensitivity, resolution and plasma etching resistance at a wavelength of 200 nm or less, especially 190 nm or less. SOLUTION: The high polymer compound comprises a recurring unit represented by the formula (I) [R1, R2 and R3 are H, F, an alkyl or a fluorinated alkyl; R4 is H or an alkyl; R5 is a single bond or an alkylene; R6 and R7 are H, F or an alkyl and at least one of them contains a fluorine atom; X is -O-or -C(=O)-O-; R8 is an acid labile group; 0<d+e<5, 0<g+h<=5, 0<(a+b)/(a+b+ c)<1, 0<c/(a+b+c)<0.8]. |
