首页
产品
黄页
商标
征信
会员服务
注册
登录
全部
|
企业名
|
法人/股东/高管
|
品牌/产品
|
地址
|
经营范围
发明名称
PREPARATION OF HOMOGENEOUS GAS MIXTURES WITH SF6
摘要
申请公布号
EP0946272(B1)
申请公布日期
2002.08.07
申请号
EP19970949955
申请日期
1997.11.19
申请人
SOLVAY FLUOR UND DERIVATE GMBH
发明人
PITTROFF, MICHAEL;WICKEL, HANS-PETER;DISTEL, REINER;BELT, HEINZ-JOACHIM
分类号
B01F5/12;B01F3/02;B01F5/00;B01F5/06;B01F13/00;C01B17/45;(IPC1-7):B01F3/02
主分类号
B01F5/12
代理机构
代理人
主权项
地址
您可能感兴趣的专利
Oestrogen derivatives as inhibitors of steroid sulphatase
7-substituted fused ring tetracycline compounds
Selectively depolymerized galactomannan polysaccharide
RNA interference mediated inhibition of Myc and/or Myb gene expression using short interfering nucleic acid (siNA)
Relaxin-3 chimeric polypeptides and their preparation and use
Light-scattering compositions
Renewable binder for nonwoven materials
Method for the production of expanded polymeric materials and expanded polymeric material obtained by the method
Defoamer emulsion compositions for pulp mill applications
Aza-benzothiophenyl compounds and methods of use
2, 4-pyrimidinediamines useful in the treatment of neoplastic diseases, inflammatory and immune system disorders
Protective anti-glucan antibodies with preference forβ-1,3- glucans
Synthesis and evaluation of novel phthalimide mimics as anti-angiogenic
Isolated mutant protein of fibroblast growth factor 18 and pharmaceutical composition comprising the same
Float glass for display substrate and method for producing it
SOI substrates with a fine buried insulating layer
Method to improve transistor tox using SI recessing with no additional masking steps
Method for making a charge balanced multi-nano shell drift region for superjunction semiconductor device
Method for forming bismuth titanium silicon oxide thin film
Metal gate electrodes for replacement gate integration scheme
