| 摘要 |
A method of manufacturing a semiconductor device, which comprises the steps of providing a substrate having a groove on the surface thereof, forming a burying film on the substrate to thereby fill the groove with the burying film, performing a first polishing step to polish the burying film by means of a CMP method, the polishing being suspended before the substrate is exposed, and performing a second polishing step to polish the burying film by means of a CMP method until part of the burying film which is disposed outside the groove is removed. The time to finish polishing of the second polishing step is determined based on a film thickness of the burying film which is left remained after finishing the first polishing step. The first polishing step may be performed under a condition which differs from that of the second polishing step.
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