| 摘要 |
A method for preventing polycide gate spiking, which essentially comprises following steps: forms an oxide layer on a substrate; forms a polysilicon layer on the oxide layer; sputters a barrier layer on the polysilicon layer; performs a first rapid thermal process; sputters a silicide layer on the barrier layer; performs a photolithography process and an etching process to remove part of the silicide layer, part of the barrier layer and part of the polysilicon layer to form a polycide gate; and performs a second rapid thermal process. Further, it is necessary to use both rapid thermal processes, the invention can be expand to only one rapid thermal process is applied. Beside, both rapid thermal processes almost don't use oxygen.
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