| 摘要 |
The package size of a diode is made smaller. On the element forming face of a semiconductor substrate having a p--type conductive type, after a hyper-abrupt p+n+ junction of a p+-type diffusion layer, an n+-type hyper-abrupt layer, an n--epitaxial layer, an n-type low resistance layer and an n+-type diffusion layer is formed, an anode electrode is formed on the top of the p+-type diffusion layer and a cathode electrode is formed on the top of the n+-type diffusion layer. Thereafter, electrode bumps are formed on the top of the anode electrode and the cathode electrode to thereby manufacture a small diode that can be facedown bonded onto a mounting board.
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