| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and an apparatus, for a plasma treatment, wherein charging damage is suppressed, the yield of a semiconductor device is increased and a high-accuracy surface treatment can be executed. SOLUTION: A substrate electrode 115 is installed inside a treatment chamber 105. The apparatus is composed of a first high-frequency power supply which gives electromagnetic waves generating a plasma without applying electric power to the substrate electrode 115 and a second high-frequency power supply which is connected to the substrate electrode 115 and which applies a substrate bias voltage. The potential of a plasma potential in the outer circumferential part of the substrate electrode 115 is made higher than a plasma potential on a material 116 to be treated. |
