发明名称 Thin layer semi-conductor structure comprising a heat distribution layer
摘要 The invention concerns a thin layer semi-conductor structure including a semi-conductor surface layer (2) separated from a support substrate (1) by an intermediate zone (3), the intermediate zone (3) being a multi-layer electrically insulating the semi-conductor surface layer from the support substrate. The intermediate zone has a considered sufficiently good electrical quality of interface with the semi-conductor surface layer and includes at least one first layer, of satisfactory thermal conductivity to provide a considered as correct operation of the electronic device or devices which are to be elaborated from the semi-conductor surface layer (2), the intermediate zone including additionally a second insulating layer of low dielectric constant, located between the first layer and the support substrate.
申请公布号 US2002089016(A1) 申请公布日期 2002.07.11
申请号 US20020093889 申请日期 2002.03.11
申请人 JOLY JEAN-PIERRE;BRUEL MICHEL;JAUSSAUD CLAUDE 发明人 JOLY JEAN-PIERRE;BRUEL MICHEL;JAUSSAUD CLAUDE
分类号 H01L21/762;H01L23/373;(IPC1-7):H01L27/01 主分类号 H01L21/762
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