发明名称 |
Thin layer semi-conductor structure comprising a heat distribution layer |
摘要 |
The invention concerns a thin layer semi-conductor structure including a semi-conductor surface layer (2) separated from a support substrate (1) by an intermediate zone (3), the intermediate zone (3) being a multi-layer electrically insulating the semi-conductor surface layer from the support substrate. The intermediate zone has a considered sufficiently good electrical quality of interface with the semi-conductor surface layer and includes at least one first layer, of satisfactory thermal conductivity to provide a considered as correct operation of the electronic device or devices which are to be elaborated from the semi-conductor surface layer (2), the intermediate zone including additionally a second insulating layer of low dielectric constant, located between the first layer and the support substrate.
|
申请公布号 |
US2002089016(A1) |
申请公布日期 |
2002.07.11 |
申请号 |
US20020093889 |
申请日期 |
2002.03.11 |
申请人 |
JOLY JEAN-PIERRE;BRUEL MICHEL;JAUSSAUD CLAUDE |
发明人 |
JOLY JEAN-PIERRE;BRUEL MICHEL;JAUSSAUD CLAUDE |
分类号 |
H01L21/762;H01L23/373;(IPC1-7):H01L27/01 |
主分类号 |
H01L21/762 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|