METHOD OF FABRICATING THIN FILM TRANSISTOR AND PROCESS CHAMBER USED FOR CARRYING OUT THE SAME

摘要

PURPOSE: A method of fabricating a thin film transistor and a process chamber used for carrying out the method are provided to continuously perform a film deposition process and an etch process to simplify a thin film transistor fabrication process. CONSTITUTION: A gate electrode(113) and a gate insulating layer(115) are sequentially formed on an insulating layer. An active layer(117) is formed on the gate insulating layer. Source and drain electrodes(121,123) are formed on the gate insulating layer, covering a part of the active layer. An insulating layer is deposited to cover the source and drain electrodes and, continuously, the insulating layer is ion-beam-etch to form a passivation layer(125) having a via hole(h2) exposing the drain electrode. A conductive layer(127) is formed to cover the insulating layer and, continuously, the conductive layer is ion-beam-etched to form a conductive line connected to the drain electrode through the via hole.