SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To accurately detect the finish point of a CMP process for a second metal film in the case that the second metal film is accumulated on a first metal film and thereafter the CMP method is performed for the laminated film of the first metal film and the second metal film after the first metal film is accumulated on the bottom face and the wall face of a recess part formed on the insulation film and the insulation film. SOLUTION: Lower layer metal wiring is formed on a semiconductor substrate 10, and an interlayer insulation film 15 is accumulated on the metal wiring. A via hole formed on the interlayer insulation film 15 embeds a plug 21 comprising a titanium film 18, a titanium nitride film 19 and a tungsten film 20. The crystal face of the tungsten film 20 is orientated to (110) face.